
Phenom ProX Desktop SEM
Description
Thermo Scientific
The sixth-generation of Thermo Scientific Phenom ProX G6 Desktop SEM fills the gap between light microscopy and floor-model SEM analysis, thus expanding the capabilities of research facilities. It offers fast, high-resolution imaging in addition to an integrated energy-dispersive X-ray diffraction (EDS) detector for robust, easy-to-use, rapid elemental analysis.
Key Differences
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Fast and easy to use
The Phenom Pro Desktop SEM can be used to relieve the burden of routine analysis for common samples from floor-model SEM instruments. Instrument configuration and the sample loading mechanism ensure quick imaging with minimal time spent tuning between experiments.
Long-lifetime CeB6 source
Facility users of any experience level can quickly begin producing high-quality results with the Phenom Pro Desktop SEM. Its long-lifetime CeB6 source offers high brightness while requiring low maintenance.
Robust and small form factor
It's high stability and small form factor allow the instrument to be used in practically any lab environment; more simply put, it does not require specialized infrastructure or expert oversight.
Process Control
Modern industry demands high throughput with superior quality, a balance that is maintained through robust process control. SEM and TEM tools with dedicated automation software provide rapid, multi-scale information for process monitoring and improvement.
Quality Control
Quality control and assurance are essential in modern industry. We offer a range of EM and spectroscopy tools for multi-scale and multi-modal analysis of defects, allowing you to make reliable and informed decisions for process control and improvement.
Fundamental Materials Research
Novel materials are investigated at increasingly smaller scales for maximum control of their physical and chemical properties. Electron microscopy provides researchers with key insight into a wide variety of material characteristics at the micro- to nano-scale.
Semiconductor Pathfinding and Development
Advanced electron microscopy, focused ion beam, and associated analytical techniques for identifying viable solutions and design methods for the fabrication of high-performance semiconductor devices.
Yield Ramp and Metrology
We offer advanced analytical capabilities for defect analysis, metrology, and process control, designed to help increase productivity and improve yield across a range of semiconductor applications and devices.
Semiconductor Failure Analysis
Increasingly complex semiconductor device structures result in more places for failure-inducing defects to hide. Our next-generation workflows help you localize and characterize subtle electrical issues that affect yield, performance, and reliability.
Physical and Chemical Characterization
Ongoing consumer demand drives the creation of smaller, faster, and cheaper electronic devices. Their production relies on high-productivity instruments and workflows that image, analyze, and characterize a broad range of semiconductor and display devices.
Technical Specification
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Light optical magnification
20–134x
Electron optical magnification range
160-350,000x
Resolution
≤ 6 nm SED and ≤ 8 nm BSD
Digital zoom
Max. 12x
Light optical navigation camera
Color
Acceleration voltages
Default: 5 kV, 10 kV and 15 kV
Advanced mode: adjustable range between 4.8 kV and 20.5 kV imaging and analysis mode
Vacuum modes
High vacuum mode
Charge reduction mode via optional low vacuum sample holder
Detector
Backscattered electron detector (standard)
Energy-dispersive X-ray detector (standard)
Secondary electron detector (optional)
Sample size
Up to 25 mm diameter (optional 32 mm)
Sample height
Up to 35 mm (optional 100 mm)
Downloads
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