
Phenom ParticleX AM Desktop SEM
Description
Thermo Scientific
The Thermo Scientific Phenom ParticleX Desktop Scanning Electron Microscope (SEM) is a multi-purpose desktop SEM designed for additive manufacturing, delivering purity at the microscale.
Take in-house control of your data:
Monitor critical characteristics of metal powders.
Apply to your powder-bed and powder-fed additive manufacturing processes.
Identify particle size distributions, individual particle morphology, and foreign particles.
The Phenom ParticleX AM Desktop SEM is equipped with a chamber that allows the analysis of large samples up to 100 mm x 100 mm. A proprietary venting/loading mechanism ensures the fastest vent/load cycle in the world, providing the highest throughput.
Key Differences
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General SEM usage
The Phenom ParticleX AM Desktop SEM features a chamber with an accurate and fast motorized stage that allows analysis of samples of up to 100 mm x 100 mm. In spite of this larger sample size, a proprietary loading shuttle keeps the vent/load cycle to an industry-leading sample-loading time of 60 seconds or less. In practice this improves the throughput factors to be greater than other SEM systems.
Additive manufacturing
The Phenom ParticleX AM Desktop SEM measures various size and shape parameters, such as minimum and maximum diameter, perimeter, aspect ratio, roughness, and feret diameter. All of these can be displayed with 10%, 50%, 90% values (e.g. d10, d50, d90).
Elemental mapping and line scan
For a user, it is simply click and go to work with the elemental mapping and line scan functionality of the Phenom ParticleX AM Desktop SEM. The line scan functionality shows the quantified element distribution in a line plot. This is especially useful for coatings, paints and other applications with multiple layers for analyzing edges, coatings, cross sections, etc.
Secondary electron detector
A secondary electron detector (SED) is optionally available on the Phenom ParticleX AM Desktop SEM. The SED collects low-energy electrons from the top surface layer of the sample. It is therefore ideally suited to reveal detailed sample surface information. The SED can be of great use for applications where topography and morphology are important. This is often the case when studying microstructures, fibers or particles.
Process Control
Modern industry demands high throughput with superior quality, a balance that is maintained through robust process control. SEM and TEM tools with dedicated automation software provide rapid, multi-scale information for process monitoring and improvement.
Quality Control
Quality control and assurance are essential in modern industry. We offer a range of EM and spectroscopy tools for multi-scale and multi-modal analysis of defects, allowing you to make reliable and informed decisions for process control and improvement.
Fundamental Materials Research
Novel materials are investigated at increasingly smaller scales for maximum control of their physical and chemical properties. Electron microscopy provides researchers with key insight into a wide variety of material characteristics at the micro- to nano-scale.
Cleanliness
More than ever, modern manufacturing necessitates reliable, quality components. With scanning electron microscopy, parts cleanliness analysis can be brought inhouse, providing you with a broad range of analytical data and shortening your production cycle.
Technical Specification
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Electron optical
Long lifetime thermionic source (CeB6 )
Multiple beam currents
Electron optical magnification range
160 - 200,000x
Light optical magnification
3–16x
Resolution
<10 nm
Image resolution options
960 x 600, 1920 x 1200, 3840 x 2400 and 7680 x 4800 pixels
Acceleration voltages
Default: 5 kV, 10 kV and 15 kV
Advanced mode: adjustable range between 4.8 kV and 20.5 kV imaging and analysis mode
Vacuum levels
Low - medium - high
Detector
Energy dispersive X-ray spectroscopy (EDS) detector (standard)
Secondary electron detector (optional)
Sample size
Max. 100 mm x 100 mm (up to 36 x 12 mm pin stubs)
Max. 40 mm (h)
Sample loading time
Light optical <5 s
Electron optical <60 s